UDC 004.82
1 V.M. Glushkov Institute of Cybernetics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
 nhodak@ukr.net
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THE METHOD OF CONSTRUCTING MEMORY DEVICES WITH ULTRAHIGH DENSITY
OF INFORMATION RECORDING
Abstract. A method is developed to construct memory devices with an ultrahigh density of information recording based on the principles of operation of the neuron molecular systems and its nuclear components, DNA and RNA. A model of impulse transfer between synapses and neuron structures during variation in the neuron sensitivity threshold as a function of current is proposed. Such devices can be used as memory modules in nanoscale sensors.
Keywords: ultra-high density of information recording; model of impulse transmission between synapses and neuron structures; record information on organic memory carriers.
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